Sentence examples for by a thin oxide from inspiring English sources

The zeroes and ones of digital information that whizz around inside a computer correspond to whether individual transistors are switched on or off.The researchers' innovation was to add a second gate to the middle of the transistor, called a "floating" gate because it is insulated by a thin oxide layer.

The biasing resistors are made of p-doped polysilicons and the coupling capacitors are built by separating implanted strips and readout strips by a thin oxide layer.

Instead, the normalized antibacterial activity of the Cu nanoparticles covered by a thin oxide layer highly increased (∼ 63% improvement) in the photocatalytic process.

Crystals with Ti undercoatings neither showed a sign of oxidation or dissolution of adhesion metal, nor a significant increase in surface roughness upon repeated cycling, probably due to passivation of Ti by a thin oxide film, and its resistance to dissolution.

For example, Austria produced a series of silver niobium euro coins starting in 2003; the colour in these coins is created by the diffraction of light by a thin oxide layer produced by anodising.

Based on the EXAFS analysis, and previous findings, 9,  10 it can be proposed that the supported Rh particles, after exposure to air at room temperature, are comprised of a metallic core surrounded by a thin oxide layer.

Anodization is a common technique used to protect the aluminium (Al) from corrosion by creating a thin oxide film on the Al surface.

In order to control efficiently the charge injection and transport in OSC devices, a novel approach by introducing a thin oxide layer between an anode and a hole-transport layer (HTL) in organic light-emitting diodes (OLEDs) has gotten considerable attentions recently [2 4].

Corrosion resistance afforded by CrN is better than TiN, which is explained by the formation of a thin oxide passive film with favorable semiconductive properties.

They were also engaged on Si with a thin oxide layer by a catalyst-free and direct growth method for high-performance Schottky junction photodetectors that exhibit remarkable properties on photodetection with the photovoltage responsivity exceeding up to 105 V/W under the incident light power of 0.05 μW, which make it suitable as weak-light-signal detectors.

A thin oxide layer was grown by placing the Si substrate in a piranha solution (4:1 mixture of H2SO4:H2O2) for 10 to 15 min.