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The thickness of each IZO and Ag layer was measured by a thickness profilometer (Surfcorder ET-3000, Kosaka Laboratory Ltd., Chiyoda-ku, Tokyo, Japan).
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We estimated the growth rate from the total film thickness measured by a surface profilometer to find that the thicknesses corresponding to one oscillation were 0.4 and 0.23 nm on (001) and (111) substrates, respectively, which is consistent with the charge-neutral formula unit cells along each orientation.
The film thickness was measured by a stylus profilometer (Alpha-Step D-100).
Film resistance is calculated from the sheet resistance measured by a SDY-4 four-point probe, and the film thickness is measured by a Dektak150 profilometer.
Film thickness was measured in situ using a quartz crystal thickness monitor and confirmed ex situ by a surface profilometer (XP-1 of Ambios Technology, USA).
The a-Si H films a-Si Hposited by plasma-enhanced CVD in a thickness ofilms nm (±30 nm, meareredepositedylus profilometer) on a Corning 7059 glass subytrate coated with 40-nm-thin nickel film and 10 nm titanium interlayer for improved adhesion to glass.
The thickness of the films was characterized by a surface profilometer.
The thickness of the active layer was verified by a surface profilometer (Alpha-Step profilometer; KLA Tencor, Milpitas, CA, USA).
The thickness of the SiON/Ag/SiON multilayer was measured by a surface profilometer.
The thickness of Ti Ag–O films was measured by a stylus profilometer DEKTAK 8 with a resolution of 1 nm.
The thickness of the PVA layer was measured by a Dektak profilometer (Bruker).
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