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The GFET was then characterized by a semiconductor parameter analyzer (Agilent 4155B) with a probe station (SUMMIT 1100B-M).
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The results were verified using a semiconductor parameter analyzer.
Current voltage (I-V) characteristics of the fabricated devices were measured using a semiconductor parameter analyzer.
The electrical characteristics of the GNR FETs were studied with a semiconductor parameter analyzer (E5270B, Agilent Technologies).
All the electrical measurements were carried out using a semiconductor parameter analyzer (Agilent 4156B apparatus).
The SCLC measurement was carried out on a semiconductor parameter analyzer (Agilent 4155C).
The electrical properties of the samples were measured by a Keithley semiconductor parameter analyzer 4200-SCSS, Keinstrumentsruments, Cleveland, OH).
The photocurrent and dark current of photodetectors were then measured by a HP4156C semiconductor parameter analyzer at room temperature.
The electrical characteristics of the devices were measured by an HP4155b semiconductor parameter analyzer with a hot chuck for elevated temperature measurements.
The current-voltage (I-V) characteristics of the NiO/TZO heterojunction diodes were measured by an HP4156 semiconductor parameter analyzer (Hewlett-Packard, Palo Alto, CA).
Dark current voltage (I V) characteristic of the fabricated photodetector was then measured by a Keithley 4200 semiconductor parameter analyzer.
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