Sentence examples similar to built in potentials from inspiring English sources

Because of high built in potential in these devices, large open circuit voltage was observed.

The increase in photoconductivity is explained in terms of built in potential barriers (ϕb) at the grain boundaries.

The polycrystalline films are reported to have some built in potential barriers (ϕb) at the grain boundaries [9].

Differently current rectifying in semiconductor diodes via diffusion of ionic charges across a pn junction sets up a built in potential; there is unidirectional current is observed across a membrane where a built in potential arises from diffusion of anions and cations in organic junctions [9].

The prepared MoS2/n-Si/p-Si photodetector includes two rectifying junctions with considerable built-in potentials.

Moreover, an n-p junction type MoS2 photodetector device with the built-in potentials to separate the photogenerated charges is able to significantly improved visible light response.

Moreover, an n-p junction type MoS2 photodetector device with the built-in potentials to separate the photogenerated charges can result in significantly improved visible light response.

The origins of the large apparent discrepancy in device J V characteristics become difficult to understand, arising from differences in built-in potentials and in the extraction layers' conductivities that can affect collection of stray current outside of device area.

The built-in potential or contact potential VD can be expressed as Eq. 7: qV_{text{D}} =, qV_{{{text{D}}1}} +, qV_{{{text{D}}2}} = E_{{{text{F}}2}} - E_{{{text{F}}1}} (7 where VD1 and VD2 are the built-in potentials on the side of In2S3 and ZnO of the heterojunction, respectively, and q is the electron charge.

To verify this concept, the built-in potentials (VBI) were estimated from the voltage at which the light and dark current densities are equal.

The p-type doping can also lead to an increase of the open-circuit voltage through adjusting the Fermi level of GP, enhancing the build-in potential in the GP/n-Si junction.