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Because of high built in potential in these devices, large open circuit voltage was observed.
In this paper, we report on electrostatic force microscopy (EFM) measurements of the built-in potential of multi-junction III V semiconductor-based solar cells.
The AgNWs/Si formed a built-in potential of 0.62 eV at the interface and this photodetector provided a considerably high rectification ratio with a low saturation current value.
This electron transfer creates a dipole at the interface, leading to reduction in built-in potential of the device.
Figure 7 Built-in potential of the Si-NCs/sc-Si heterojunction as a function of the R c value.
These MOSs enable effective Fermi-level pinning and also increase the built-in potential of the device.
The other reason is that, the Voc is also well known to be dependent on the built-in potential of the solar cell structure.
We choose a built-in potential of Vbi = −0.3 V and a carrier concentration ratio RC = exp(−20) ≈ 2 × 10−9; this yields the values for Wi and Wh listed in Table 1.
During and after illumination, an offset voltage was applied to compensate the built-in potential of the devices, which prevents an initial photocurrent prior to the application of the voltage ramp.
The prominent peak at approximately 960 nm corresponds to the generation of electron-hole pairs in silicon substrate, which are separated by the built-in potential of n+/p junction and collected at the top and bottom Al contacts.
The increase in photoconductivity is explained in terms of built in potential barriers (ϕb) at the grain boundaries.
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