V0 is the built-in potential, and Vbias is the applied voltage.
Thus, the formation of the charge accumulation layer on both the sides can reduce the built-in potential, and the reduced potential is equal to the VOC.
V0 is the built-in potential, and E, with the direction from n-CdS to p-MoS2, is the built-in electric field.
However, the QD film thickness cannot be increased, originated by the small built-in potential and narrow space charge region (SCR) in such Schottky junction CQD PVs.
For the high bias effect, carriers gain thermal energy from high bias can easily overcome the built-in potential and accelerate the recombination photo-generated electron and hole pairs.
In comparison with the commonly used PEDOT PSS anode buffer layer, the CuSCN anode buffer layer can increase the built-in potential and decrease the interfacial energy barrier with CH3NH3PbI3, which results in higher Voc.
The self-powered behavior can be well explained by the formation of a space charge layer near the interface of the solid-liquid heterojunction, which results in a built-in potential and makes the solid-liquid heterojunction work in photovoltaic mode.
Further Cu-incorporation enhanced the work function and conductivity of NiO films (NiO Cu, for short), increasing built-in potential and favoring hole transport in the NiO Cu/n-Si heterojuNiO Cu/n-Sicheterojunction record PCE of 9.1% among all bulk-like NiO/Si heterojunction solar cells.
Differently current rectifying in semiconductor diodes via diffusion of ionic charges across a pn junction sets up a built in potential; there is unidirectional current is observed across a membrane where a built in potential arises from diffusion of anions and cations in organic junctions [9].
Because of high built in potential in these devices, large open circuit voltage was observed.
The increase in photoconductivity is explained in terms of built in potential barriers (ϕb) at the grain boundaries.
