"built in potential" is a correct and valid phrase in written English.
It refers to the potential difference between two materials that come into contact with each other, usually in the context of electronics. This potential difference is inherent and does not require an external power source. Example: "The semiconductor material used in the construction of this electronic device has a built-in potential that allows for efficient flow of electrical current."
Because of high built in potential in these devices, large open circuit voltage was observed.
The increase in photoconductivity is explained in terms of built in potential barriers (ϕb) at the grain boundaries.
The polycrystalline films are reported to have some built in potential barriers (ϕb) at the grain boundaries [9].
Differently current rectifying in semiconductor diodes via diffusion of ionic charges across a pn junction sets up a built in potential; there is unidirectional current is observed across a membrane where a built in potential arises from diffusion of anions and cations in organic junctions [9].
The SiO2 layer increased the built-in potential to give rise to the forward current of 50 mA.
Explaining the dependence of 〈N*〉 on Va in Fig. 3(d), a key factor is built-in potential Vbuilt-in across the p-n junction.
Jiang, C.-S. C.-S.. Doet the local built-in potential on grain bounDoeses of Cu(In,Ga)Se2 then filocalenefit photovoltaic performance of the device?
Besides, the reduced WF of TiO2 results in the enhanced built-in potential, which promotes the charge separation, transport and collection.
The results show that the charge transfer at the interface of the heterostructures induces a built-in potential, which benefits the separation of photogenerated charge carriers.
Further optimization of the Cu2O film thickness according to their charge carrier concentration and absolute permittivity values also assures the full built-in potential across the junction interface.
Impedance spectroscopy and capacitance-voltage studies were carried out to obtain series and shunt resistances, built-in potential, acceptor carrier density, depletion width and flat band potential.
