Sentence examples for buffer was grown at from inspiring English sources

After the surface oxide desorption of InP substrate at 524°C, a 75-nm undoped InP buffer was grown at 474°C, the normal growth temperature of InP.

Widrich says Buffer is growing at over 20% every month, and is confident that the learnings from the ShareFeed data can top up Buffer's growth rate "significantly".

After that, a 30-nm-thick Si buffer layer was grown at 700 °C.

A 300-nm undoped GaAs buffer layer was grown at a substrate temperature Ts of 580°C.

First, a 400 nm GaAs buffer layer was grown at 600°C.

After chemical treatment, the sample was loaded into the MBE reactor, and a 30-nm GaAs buffer layer was grown at 470°C.

After a thermal desorption, a ~100-nm-thick Si buffer layer was grown at a rate of 0.5 Å/s to obtain smooth and clean surface.

All samples were prepared at same procedure: after removing oxides at 580°C, about 170 nm of a GaAs buffer layer was grown at 560°C under Ga and As4 fluxes, 1.0 × 10−5 Pa and 6.0 × 10−4 Pa, respectively.

Previous to any growth process, oxide from the GaAs 001) surface was thermally removed and a 150-nm-thick GaAs buffer layer was grown at a growth rate of 0.5 monolayer (ML) per second at substrate temperature TS = 580°C.

After in-situ oxide desorption at 950°C for 20 min, a 45 nm-thick Si buffer layer was grown at substrate temperatures ramped up from 550 to 700°C [6, 7].

After removal of the native oxide at 600°C under As4 flux, a 200-nm GaAs buffer layer was grown at 590°C with a growth rate of 1 monolayer (ML /s.