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The semiconducting properties of passive films formed on AISI type 304 stainless steel in borate buffer solution were studied by capacitance (Mott Schottky approach) and photocurrent measurements.
The semiconducting properties of passive films formed on nickel base alloys type Alloy 600 in borate buffer solution were studied by capacitance measurements and photoelectrochemistry.
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The effect of pH for the PBS buffer solution was studied (Fig. 8).
The detection mechanism of the adenine (Ad) using this probe in buffer solution was studied by ultraviolet-visible (UV vis) and fluorescence spectroscopy.
The kinetics of electro-reduction of PAA in 0.1 M acetate buffer solution was studied at Au, Ag, and GC electrodes in details, and the relevant kinetic parameters (i.e., the exchange current density, j0, the standard rate constant, k0, and cathodic transfer coefficient, αc) were estimated from the Tafel plots.
The copper complex of 4,5-diazafluorene-9-one (dafone) and bromine ligands ([Cu dafone)2]Br2) was prepared and its interaction with double-stranded salmon sperm DNA (dsDNA) in pH 8.0 Britton Robinson (B R) buffer solution was studied by electrochemical experiments at the glassy carbon electrode (GCE).
The evaluation of the effectiveness of HILP for the inactivation of E. coli and L. innocua in citric acid-disodium phosphate buffer solution was studied from Muñoz et al. [ 2].
The solubility and diffusivity of oxygen in borate buffer solutions were studied on a Pt μ electrode under diffusion-controlled conditions.
Anodic behaviour of Mg in HCO−3/CO2−3 buffer solutions was studied by quasi-steady measurements on high purity magnesium electrodes in solutions of pH between 9 and 11, and with total concentration of carbonates between 10−2 and 1 M. Two domains of passivity were observed, each with essentially potential independent corrosion rates.
The effect of the size of Pd/C catalyst particles adhering to gas bubbles on the enhancement of the hydrogen absorption rate into a buffered aqueous hydroxylaminephosphate solution is studied using a 0.5-litre bubbles-containing batch-operated stirred slurry reactor.
The surface morphology of the 15-nm strained buffer layer of Si0.7Ge0.3 solid solution was studied using the atomic force microscopy technique[14] before and after growth of Ge islands.
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