Sentence examples for buffer layers were used from inspiring English sources

Compared to the cell without n/i- buffers, cell efficiency increases from 5.7%to6.5%5% when double buffer layers were used.

The FePt films on the Cr90Mo10 underlayers showed a continuous microstructure, while they showed a particle-like structure when the Cu buffer layers were used.

To improve the crystalline quality of AlN layer, well-known growth techniques, such as multi-step growth using buffer layers, were used at temperatures above 1200 °C in order to lower the disorientation to 300 arcsec.

When low temperature (LT), 500°C, GaN buffer layers are used, GaN epitaxial layers grown on 200°C nitrided sapphire have a higher density of N-polar inversion domains.

Thus, when the InGaAs buffer layer was used instead of the GaAs buffer layer, tc decreased on the GaAs (311) B substrates but remained constant on the GaAs (100) substrates.

Thin films of Fe ∼10 nm were deposited on chemically cleaned Si wafers by thermal evaporation technique at a base pressure of 2.0 × 10−6 Torr and no buffer layer was used between Fe film and Si substrates.

For light emission from single molecules, Qiu et al. [6] reported light emission from individual Zn II -etioporphyrin I molecules adsorbed on Al2O3/NiAl(110), in which an oxide buffer layer is used to prevent fluorescence quenching and disturbance of pronounced plasmon emission [7–9].

Series of step-graded AlxGa1−xN epitaxial layers were used as the buffer layers to compensate thermal tensile stresses produced during the post-growth cooling process as well as to reduce the density of threading dislocations (TDs) generated due to the lattice mismatches between III-nitride layers and the silicon substrates.

In this photoreceiver, a high performance of GaAs metal-semiconductor-metal photodetector with InGaP buffer and capping layers was used.

As shown in Fig. 1, DQS requires the routing information in the network layer to estimate the latest departure time for each packet; the buffer occupation in the down layers is used to adjust the sending rate of Semi-TCP, and the congestion control is conducted in MAC.

The atomic compositions of the silicon-rich and buffer layers were determined using x-ray photoelectron spectroscopy measurements, using a Thermo Scientific K-Alpha setup.