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The microstructure and surface morphology of LZO buffer layers were studied by X-ray diffraction, optical microscopy, field emission scanning electron microscopy and atomic force microscopy.
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The effect of interface hybridization and strain induced in FeCo by FePt buffer layer was studied.
In the present work, the growth of AlN buffer layer was studied.
Pung et al. [21] have proved that the deposition temperature played an important role in preferential growth of ZnO films, but changing the growth direction of ZnO films by inserting different buffer layers was rarely studied.
Compared to the cell without n/i- buffers, cell efficiency increases from 5.7%to6.5%5% when double buffer layers were used.
Reproducible highly textured LZO buffer layers were obtained at annealing temperatures as low as 900 °C.
The buffer layers were characterised by XRD, SEM and optical microscopy.
Textured (Eu0.893Yb0.107 2O3 buffer layers were grown on biaxially textured-Ni (1 0 0) substrates.
Thin biaxially textured buffer layers were deposited in a temperature range from 600 to 800 °C.
In this study, in the shelf life test in air of inverted OPVs with LZO as the interlayer, two inverted OPVs with different anode buffer layers were compared.
Two types of buffer layers have been studied for this purpose: self-assembled monolayers (SAMs) [72-77] [72-77]n polymer landrs [78,79].
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