Sentence examples for buffer layers were grown from inspiring English sources

CGO buffer layers were grown on top of LZO at annealing temperatures of 1000 °C.

Textured (Eu0.893Yb0.107 2O3 buffer layers were grown on biaxially textured-Ni (1 0 0) substrates.

Graded InxGa1−xP buffer layers were grown on GaP substrate in order to prepare optically transparent substrate for optoelectronic structures.

Compositionally undulating step-graded InAsyP1−y buffer layers were grown by metal-organic chemical vapor deposition (MOCVD) to relax the strain of In0.68Ga0.32As with InP substrate.

Biaxially textured La2Zr2O7 (LZO) and Ce Gd O (CGO) buffer layers were grown on Ni-RABiTS (rolling-assisted biaxially textured substrates) to obtain suitable buffer layer architectures for YBa2Cu3O7−x (YBCO) coated conductors.

Substrate surfaces were deoxidized at 620°C, and a 30 nm GaAs buffer layers were grown to achieve atomically flat surface.

Textured CeO2/YSZ/CeO2 buffer layers are grown on biaxially textured Ni (100) substrate from the solution of Zr, Y, and Ce based organometalic compounds, solvent and chelating agent using reel-to-reel sol gel technique.

Both the QDs layer and the buffer layer were grown at 530 °C.

For H2 percentages between 6.3 and 10%, the structure and morphology are characteristic of nanocrystalline films, affording low roughness values when a buffer layer was grown between the diamond coating and the treated silicon surface.

The CdS buffer layer was grown by chemical bath deposition in an open reactor heated at 60 °C, kept opened and containing ammonia (20 ml, 1 mol/l), cadmium acetate dihydrate (12 ml, 2.6 × 10−3 mol/l) and thiourea (12 ml, 9.5 10−2 mol/l).

The AlN buffer layer was grown by MBE (SVTA 35 V-2).