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The influences of substrate temperature and oxygen partial pressure on the microstructure and surface morphology of LZO buffer layers were discussed.
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The role for an external Sn supply from the buffer layer is discussed based on the experimental results.
Compared to the cell without n/i- buffers, cell efficiency increases from 5.7%to6.5%5% when double buffer layers were used.
Reproducible highly textured LZO buffer layers were obtained at annealing temperatures as low as 900 °C.
The buffer layers were characterised by XRD, SEM and optical microscopy.
Textured (Eu0.893Yb0.107 2O3 buffer layers were grown on biaxially textured-Ni (1 0 0) substrates.
Thin biaxially textured buffer layers were deposited in a temperature range from 600 to 800 °C.
Highly orientated n-ZnO buffer layers were pre-sputtered using RF co-sputtering.
CGO buffer layers were grown on top of LZO at annealing temperatures of 1000 °C.
a-Si H tra-Si Hentranslucentlsolarh various n/i- buffer layers were fabricells.
The mechanisms of the improved corrosion current density by the Ta coating and the enhancement of mechanical bonding of the Ta coating by a Ti buffer layer are further discussed.
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