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The atomic compositions of the silicon-rich and buffer layers were determined using x-ray photoelectron spectroscopy measurements, using a Thermo Scientific K-Alpha setup.
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Compared to the cell without n/i- buffers, cell efficiency increases from 5.7%to6.5%5% when double buffer layers were used.
Reproducible highly textured LZO buffer layers were obtained at annealing temperatures as low as 900 °C.
The buffer layers were characterised by XRD, SEM and optical microscopy.
Textured (Eu0.893Yb0.107 2O3 buffer layers were grown on biaxially textured-Ni (1 0 0) substrates.
Thin biaxially textured buffer layers were deposited in a temperature range from 600 to 800 °C.
The mechanics model indicated that the Young's modulus and thickness of the buffer layer were the important parameters determining the crack resistance of the film.
For this to be realized, buffer layers are required.
Will the contact property of interfaces between active layer droplets and cathode buffer layers be changed when the buffer layer is modified?
Both the QDs layer and the buffer layer were grown at 530 °C.
The long-term in vitro release rates of these devices were determined in protein-free buffer or buffer containing 50% plasma protein.
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