Sentence examples for buffer layers were deposited from inspiring English sources

In the present work, La2Zr2O7 (LZO) buffer layers were deposited using pulsed laser deposition (PLD) on various metallic substrates including epitaxial pure Ni on a LaAlO3 (LAO) substrate as well as highly textured Ni 5 at.%W tapes.

Thin biaxially textured buffer layers were deposited in a temperature range from 600 to 800 °C.

CeO2, YSZ and Y2O3 buffer layers were deposited with single (CeO2 or Y2O3) and double (YSZ/CeO2) sequence.

La2Zr2O7 (LZO) buffer layers were deposited on bi-axially textured Ni W substrates with CeO2 seed layer by radio-frequency magnetron sputtering for the large-scale application of YBa2Cu3O7 − x (YBCO) coated conductors.

The (Pb0.90La0.10 Ti0.975O3 (PLT) thin films with different thicknesses of PbOx buffer layers were deposited on the Pt(111)/Ti/substrates0) subytRFtes by RF magnetron sputtering technique.

Polystyrene (PS) buffer layers were deposited by drop-cast method onto the substrates surface to ensure the adherence of the pure TiO2/PS and TiO2-GO/PS composite layer.

In-Sn-Zn-O (ITZO) films and a TiO2 buffer layer were deposited on PET substrates at room temperature by magnetron co-sputtering using two cathodes (DC, RF) and RF reactive sputtering at an O2 flow ratio of 2%, respectively.

Then, a 10-nm thick Al2O3 buffer layer was deposited by atomic layer deposition.

First, a 20 nm thick GaN buffer layer was deposited on (0001) sapphire substrate.

A Cr layer that functioned as a buffer layer is deposited between the alloy film and die surface.

When an aluminum buffer layer is deposited on electrically conductive carbon paper, high yield CNTs can be achieved while no CNTs can be observed without this buffer layer.