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In this study, in the shelf life test in air of inverted OPVs with LZO as the interlayer, two inverted OPVs with different anode buffer layers were compared.
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The case of a single layer is compared to the case of a double layer.
Compared to the cell without n/i- buffers, cell efficiency increases from 5.7%to6.5%5% when double buffer layers were used.
Reproducible highly textured LZO buffer layers were obtained at annealing temperatures as low as 900 °C.
The buffer layers were characterised by XRD, SEM and optical microscopy.
Textured (Eu0.893Yb0.107 2O3 buffer layers were grown on biaxially textured-Ni (1 0 0) substrates.
Thin biaxially textured buffer layers were deposited in a temperature range from 600 to 800 °C.
For this to be realized, buffer layers are required.
Will the contact property of interfaces between active layer droplets and cathode buffer layers be changed when the buffer layer is modified?
Both the QDs layer and the buffer layer were grown at 530 °C.
Various buffer structures, a Gaussian buffer and a buried n-doped layer of increased doping called epitaxy level buffer are compared with a reference diode without any buffer structure.
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