Sentence examples for buffer layer with the from inspiring English sources

We compared directly the nucleation sites of Ge quantum dots on a relaxed SiGe buffer layer with the sites of a minimum stored energy density of the Ge dots.

However, the deposition of thicker buffer layer is limited because of the poor adhesion of the lanthanum nitrate buffer layer with the underlying PVP organic film.

Vertical solid lines connect the GaN buffer layers with the fully strained SLS points predicted by theory for that structure, and the dashed (relaxation) line connects the fully strained SLS with the fully relaxed SLR points.

Table 1 Comparison of the BTO thin films deposited on different buffer layers with the bulk material Phase Source Method a= b c c/a ratio Tetragonal (p4mm) Our work Sol gel 3.994 4.038 1.011 Tetragonal On MgO buffer layer[18] MOCVD 3.990 4.04 1.012 Tetragonal BTO ceramic[19] Chemical processing 3.998 4.022 1.0058 Tetragonal BTO single crystal[20] Chemical processing 3.992 4.036 1.011.

In [6, 7], 40-period GaN/Al x Ga1−xN (7/4 nm) SLs deposited on GaN (tensile stress) and on AlGaN (0.3 μm) buffer layers with the same Al mole fraction as the SL barriers (compressive stress), both deposited on GaN-on-sapphire templates were investigated.

In contrast, the buffer layer with lower stiffness than the substrate reduced the crack resistance of the brittle film.

The buffer layer with higher stiffness than the substrate enhanced the crack resistance of the brittle film as the thickness of the buffer layer increased.

The simulated current voltage characteristic indicates how an insulating buffer layer with suitable thickness decreases the barrier height at the cathode and therefore increases the electron injection.

In order to accommodate lattice strain and interface mismatch, a low-temperature ZnO buffer layer with a thickness above the critical thickness for strain relaxation is deposited on the GaN surface.

As the potential barrier at the AZO/p interface is due to the work function difference, it is possible to insert a suitable buffer layer, with higher conductivity, between the AZO and p-type a-SiC H in order to reduce the loss in the FF.

The buffer layer is believed to reduce the mismatch of the atomic structure between the glass and VG and similar results observed elsewhere [32], and the VG nanosheets are grown on the buffer layer with less stress.