Sentence examples for buffer layer with a from inspiring English sources

Therefore, Si nanostructures and a PDMS buffer layer with a rough surface can dramatically improve the AR properties of a Si surface (Figure 7).

In particular, in the case of a buffer layer with a thickness of 250 μm, the resistance was almost zero up to a curvature of 1 cm−1.

X-ray diffraction measurements revealed an epitaxial growth of the CYO buffer layer with a texture spread down to 2.2° and 4.7° for the out-of-plane and in-plane alignment, respectively.

In order to accommodate lattice strain and interface mismatch, a low-temperature ZnO buffer layer with a thickness above the critical thickness for strain relaxation is deposited on the GaN surface.

The CNTs prepared on an Au buffer layer with a thickness exceeding 40 nm were more uniform and abundant compared to those grown on substrates without a buffer layer or with a 20-nm Au buffer layer.

The growth was initiated from the GaAs buffer layer with a thickness of 200 nm at 650°C, and then temperature was reduced to 550°C for the growth of self-assembled In x Ga1 − xAs QDs.

Buffer layers with a 20-nm low temperature AlN nucleation layer, a 1-μm high temperature AlN layer, and a graded composition AlGaN layer have been used for initial growth on sapphire.

Thin GaN buffer layers, with a thickness of 50 nm, were grown under the optimized conditions with the substrate temperature at 760 °C and Ga source temperature at 1020 °C on c-plane sapphire [11, 12].

We compared directly the nucleation sites of Ge quantum dots on a relaxed SiGe buffer layer with the sites of a minimum stored energy density of the Ge dots.

As the potential barrier at the AZO/p interface is due to the work function difference, it is possible to insert a suitable buffer layer, with higher conductivity, between the AZO and p-type a-SiC H in order to reduce the loss in the FF.

In a typical preparation procedure, a Ti buffer layer with thickness of 50 nm was deposited on the silicon substrate.