Sentence examples for buffer layer were grown from inspiring English sources

Both the QDs layer and the buffer layer were grown at 530 °C.

The AlN buffer layer was grown by MBE (SVTA 35 V-2).

After that, a 30-nm-thick Si buffer layer was grown at 700 °C.

First, a 500-nm GaAs buffer layer was grown on a GaAs 001) substrate.

A 300-nm undoped GaAs buffer layer was grown at a substrate temperature Ts of 580°C.

First, a 400 nm GaAs buffer layer was grown at 600°C.

Before growth of MnAs, a 100-nm GaAs buffer layer was grown to smoothen the surface.

A 0.5-μm undoped GaAs buffer layer is grown at 580°C, followed by a 30-nm Al0.33Ga0.67As barrier layer.

Next, a GaAs buffer layer was grown on the surface by using MBE until atomically smooth surface was obtained.

Moreover, APDs may be reduced to a maximum extend if a buffer layer is grown on Ge substrate.

Then, a GaAs buffer layer was grown for all samples under a temperature of 550°C for 15 min.