Sentence examples for buffer layer were deposited from inspiring English sources

In-Sn-Zn-O (ITZO) films and a TiO2 buffer layer were deposited on PET substrates at room temperature by magnetron co-sputtering using two cathodes (DC, RF) and RF reactive sputtering at an O2 flow ratio of 2%, respectively.

Then, a 10-nm thick Al2O3 buffer layer was deposited by atomic layer deposition.

After oxide removal, a GaAs buffer layer was deposited to obtain a flat surface.

Then a 50 nm thick Si buffer layer was deposited at 650°C with a growth rate of 0.36 Å/s.

After oxide desorption, a 300-nm GaAs buffer layer was deposited on the semi-insulating GaAs (100) wafers at 580°C.

A Cr layer that functioned as a buffer layer is deposited between the alloy film and die surface.

First, a 64-nm-thick Si buffer layer was deposited on the wafer at 640°C, followed by a 2.5-nm-thick Ge layer depositing at the same temperature.

After that, a 30-nm GaN buffer layer was deposited at 530°C followed by a 2-μm GaN bulk layer grown at 1,040°C.

Prior to the growth of the n-type ZnO nanorods, a NiO buffer layer was deposited by the following sol-gel method.

A 2-, 4-, and 8-nm thick TiO2 buffer layer was deposited by ALD at 400°C using Beneq TFS 500 ALD system (Beneq, Vantaa, Finland).

First of all, a high-quality single-crystalline Ge buffer layer was deposited at 250°C with a thickness of ca. 60 nm.