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The effect of interface hybridization and strain induced in FeCo by FePt buffer layer was studied.
In the present work, the growth of AlN buffer layer was studied.
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The microstructure and surface morphology of LZO buffer layers were studied by X-ray diffraction, optical microscopy, field emission scanning electron microscopy and atomic force microscopy.
Pung et al. [21] have proved that the deposition temperature played an important role in preferential growth of ZnO films, but changing the growth direction of ZnO films by inserting different buffer layers was rarely studied.
To improve the operation current lowing of the Zr:SiO2 RRAM devices, a space electric field concentrated effect established by the porous SiO2 buffer layer was investigated and found in this study.
Oxide buffer layer was pre-sputtered using RF sputtering technique.
First, a 20 nm thick GaN buffer layer was deposited on (0001) sapphire substrate.
Thus, a buffer layer was avoided in this experiment.
GaN buffer layer was achieved by a two-step method.
Then, a 10-nm thick Al2O3 buffer layer was deposited by atomic layer deposition.
A In2S3 buffer layer was introduced between TiO2 and CuInS2 layer also by SILAR.
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