Exact(1)
The comparison of the photovoltaic performance and parameters of photoelectrodes with and without In2S3 buffer layer was shown in Figure 6 and Table 2, respectively.
Similar(59)
The room temperature PL spectra of ZnO thin films with and without the AlN buffer layer are shown in Figure 3.
The AFM images of the 150-nm-thick BTO films deposited at 700°C for different thicknesses of the buffer layers are shown in Figure4a,b.
Each layer is shown.
The irregular cross profile of sample A revealed a polycrystalline nature of the ZnO film grown without any buffer layer on Si. Figure 2b shows that the AlN buffer layer was introduced between the ZnO film and Si substrate, and the thickness of AlN buffer layer was measured to be 60 nm.
A 200 nm thick GaN buffer layer was then regrown on the patterned u-GaN template at 1,020°C as shown in Fig. 1c.
The triple-layer coating (TLC) showed the best thermal cycle performance among all samples, suggesting that the buffer layer was efficient in improving lifetime performance.
A 50-nm-thick Si buffer layer was first grown and followed by growth of a 2-μm-thick SiGe buffer layer and a 1-μm-thick Si0.8Ge0.2 uniform epilayer, as shown in Figure 1a.
Oxide buffer layer was pre-sputtered using RF sputtering technique.
Thus, a buffer layer was avoided in this experiment.
GaN buffer layer was achieved by a two-step method.
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