Exact(1)
The surface of the buffer layer was monitored by the reflection high-energy electron diffraction (RHEED) technique and found to be atomic flat evidenced by the streaky RHEED patterns.
Similar(59)
The growth of each layer was monitored by RHEED.
The thickness of the matrix layer was monitored by the output from the optical sensor.
The formation of the protein layer was monitored by SPR spectroscopy.
The thicknesses of Mg layers were monitored by alpha-step.
Deposition rates and thickness of the layers were monitored in situ using oscillating quartz monitors.
Oxide buffer layer was pre-sputtered using RF sputtering technique.
Thus, a buffer layer was avoided in this experiment.
GaN buffer layer was achieved by a two-step method.
Then, a 10-nm thick Al2O3 buffer layer was deposited by atomic layer deposition.
A In2S3 buffer layer was introduced between TiO2 and CuInS2 layer also by SILAR.
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