Exact(1)
Hence, the Gp/ω characteristic with one peak observed in the deep depletion region reinforced that the bulk trap with one single level in GaN buffer layer was identified by conventional conductance measurement.
Similar(59)
Interstitial cells within this layer were identified as fibroblasts.
No clear meteoric layers were identified.
Oxide buffer layer was pre-sputtered using RF sputtering technique.
Thus, a buffer layer was avoided in this experiment.
GaN buffer layer was achieved by a two-step method.
Then, a 10-nm thick Al2O3 buffer layer was deposited by atomic layer deposition.
A In2S3 buffer layer was introduced between TiO2 and CuInS2 layer also by SILAR.
First, a buffer layer was applied from a slurry containing the finer Ni powders.
The effect of interface hybridization and strain induced in FeCo by FePt buffer layer was studied.
After selective deposition of a Si buffer layer on the exposed Si substrate, selective SK growth of Ge on the Si buffer layer was carried out.
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