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In addition, however, to avoid the formation of metal silicide at a high temperature, a buffer layer was adopted in the annealing process [17].
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The Pt layer was adopted as the bottom electrode.
One hidden layer was adopted, which include nine neurons.
But as Layer is adopted in a more widespread manner, there could be interesting network effecrs.
The buffer layer is often adopted in OSCs to improve the device performance.
Oxide buffer layer was pre-sputtered using RF sputtering technique.
Thus, a buffer layer was avoided in this experiment.
GaN buffer layer was achieved by a two-step method.
Then, a 10-nm thick Al2O3 buffer layer was deposited by atomic layer deposition.
A In2S3 buffer layer was introduced between TiO2 and CuInS2 layer also by SILAR.
First, a buffer layer was applied from a slurry containing the finer Ni powders.
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