Sentence examples for buffer layer is used from inspiring English sources

For light emission from single molecules, Qiu et al. [6] reported light emission from individual Zn II -etioporphyrin I molecules adsorbed on Al2O3/NiAl(110), in which an oxide buffer layer is used to prevent fluorescence quenching and disturbance of pronounced plasmon emission [7–9].

Thus, when the InGaAs buffer layer was used instead of the GaAs buffer layer, tc decreased on the GaAs (311) B substrates but remained constant on the GaAs (100) substrates.

Thin films of Fe ∼10 nm were deposited on chemically cleaned Si wafers by thermal evaporation technique at a base pressure of 2.0 × 10−6 Torr and no buffer layer was used between Fe film and Si substrates.

Compared to the cell without n/i- buffers, cell efficiency increases from 5.7%to6.5%5% when double buffer layers were used.

When low temperature (LT), 500°C, GaN buffer layers are used, GaN epitaxial layers grown on 200°C nitrided sapphire have a higher density of N-polar inversion domains.

The FePt films on the Cr90Mo10 underlayers showed a continuous microstructure, while they showed a particle-like structure when the Cu buffer layers were used.

To improve the crystalline quality of AlN layer, well-known growth techniques, such as multi-step growth using buffer layers, were used at temperatures above 1200 °C in order to lower the disorientation to 300 arcsec.

In another set, a nanocrystalline silicon layer is used as the buffer layer.

Some reported results show CBRAM characteristics using bilayer switching materials: one layer is used as a buffer or interfacial layer and the other one is used as a switching layer.

When the nanocrystalline silicon layer is used as a buffer layer, there is a large increase in the Voc and FF with a smaller decrease in the Jsc, resulting in higher cell efficiency.

The Cu-Te layer behaved as a buffer layer, and the GdO x layer was used as a switching layer.