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The first thick GaAs buffer layer is topped by a gradually variable composition Al x Ga1−x As (0.3 ≤ x ≤ 0.75) layer and an etch stop film of Al0.75Ga0.25As which enables selective substrate removal during post-growth processing [15].
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It is noticed that performance obtained with our modified buffer layer is among the top values of reported perovskite solar cells with some other buffer layers [14, 15], showing the promising effectiveness of this novel ETL.
The first "real" graphene layer on top of this buffer layer is strained, not at all free-standing, strongly coupled to the C-rich buffer, heavily n-type doped, with a low-carrier mobility.
Delamination and/or cracks were created at the interface between the bond and top coats or above the interface in the single-layer TBCs, but the TBCs with the buffer layer were delaminated and/or cracked at the interface between the buffer layer and the top coat, independent of buffer layer species.
The microstructure of the buffer layer was characterized by vermicular ferrite which was replaced by lathy morphology adjacent the top coating.
CGO buffer layers were grown on top of LZO at annealing temperatures of 1000 °C.
The composite coat of 50 50 volume ratio was employed as the top coat, and two types of buffer layers were introduced (25:75 volume ratio in LZO and 8YSZ, and 8YSZ only).
Be sure the green layer is on top.
In the first concept, a ZnO Al window layer is deposited on top of the CuI buffer layer.
CeO2/YSZ/CeO2 buffer layer structure is one of the preferred buffer layers for fabrication of coated conductors.
The top layer is DPF for protective purposes.
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