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The generation of alumina from the aluminum buffer layer is thought to play an important role in promoting the nanotube growth.
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This layer is thought to be a Pre-Oligocene layer (e.g. Miura et al., 2005).
A needle-like phase also present in the layer is thought to be cementite.
Will the contact property of interfaces between active layer droplets and cathode buffer layers be changed when the buffer layer is modified?
Oxide buffer layer was pre-sputtered using RF sputtering technique.
Thus, a buffer layer was avoided in this experiment.
GaN buffer layer was achieved by a two-step method.
Then, a 10-nm thick Al2O3 buffer layer was deposited by atomic layer deposition.
A In2S3 buffer layer was introduced between TiO2 and CuInS2 layer also by SILAR.
Both the QDs layer and the buffer layer were grown at 530 °C.
Sar1-GTP recruits Sec23/Sec24; this inner layer of COPII is thought to mediate cargo capture.
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