The vertical line denotes the limit analyzed in the previous design where the buffer layer was made of AZO and the metallic layer was made of gold.
The first layer of coating is made of soy peptide, and the second layer is made of cellulose and gum.
They all build up objects, layer by layer, but what the layers are made of varies from one to another.
The existence of the buffer layer is confirmed by a scratch made by tweezers as shown in the inset.
Will the contact property of interfaces between active layer droplets and cathode buffer layers be changed when the buffer layer is modified?
In other words, when the thickness of the buffer layer was selected, a specific Eb made it possible to position the ITO layer at the NA. Figure 3b shows the corresponding maximum stress of the ITO layer according to the bending curvature for various Eb.
Oxide buffer layer was pre-sputtered using RF sputtering technique.
Thus, a buffer layer was avoided in this experiment.
GaN buffer layer was achieved by a two-step method.
Then, a 10-nm thick Al2O3 buffer layer was deposited by atomic layer deposition.
