In Figure 5, the hidden layer is located between input layer and output layer.
Thus, by controlling the elastic modulus and thickness of a buffer layer, the NA position could be easily controlled, and the mechanical bending stability of the ITO layer could be significantly increased when the ITO layer was located at the NA position.
These layers are located directly anterior to the RPE.
Will the contact property of interfaces between active layer droplets and cathode buffer layers be changed when the buffer layer is modified?
As a whole, each PE calculates the messages in parallel by accessing the local buffer or the layer buffer which is located in the neighboring PEs or PE groups.
Oxide buffer layer was pre-sputtered using RF sputtering technique.
Thus, a buffer layer was avoided in this experiment.
GaN buffer layer was achieved by a two-step method.
Then, a 10-nm thick Al2O3 buffer layer was deposited by atomic layer deposition.
A In2S3 buffer layer was introduced between TiO2 and CuInS2 layer also by SILAR.
