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However, the deposition of thicker buffer layer is limited because of the poor adhesion of the lanthanum nitrate buffer layer with the underlying PVP organic film.
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When an aluminum buffer layer is deposited on electrically conductive carbon paper, high yield CNTs can be achieved while no CNTs can be observed without this buffer layer.
A functionally graded piezoelectric material (FGPM) buffer layer is in between the upper layer and the substrate.
Furthermore, the Si0.5Ge0.5 buffer layer is also helpful for the enhancement of performance.
The thickness-insensitive PDINO cathode buffer layer is beneficial to higher short circuit current density.
Will the contact property of interfaces between active layer droplets and cathode buffer layers be changed when the buffer layer is modified?
The difference of the energy band offsets in the presence of the NiO buffer layer is slightly higher than that without the NiO buffer layer.
The vertical line denotes the limit analyzed in the previous design where the buffer layer was made of AZO and the metallic layer was made of gold.
First, a 20 nm thick GaN buffer layer was deposited on (0001) sapphire substrate.
Oxide buffer layer was pre-sputtered using RF sputtering technique.
Thus, a buffer layer was avoided in this experiment.
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