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A 0.5-μm undoped GaAs buffer layer is grown at 580°C, followed by a 30-nm Al0.33Ga0.67As barrier layer.
Moreover, APDs may be reduced to a maximum extend if a buffer layer is grown on Ge substrate.
After the desorption of an oxide layer in the MBE growth chamber, ~100-nm thick GaAs Si-doped (n = 2 × 1018 cm −3) buffer layer is grown on the GaAs(111)B substrate.
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Both the QDs layer and the buffer layer were grown at 530 °C.
The AlN buffer layer was grown by MBE (SVTA 35 V-2).
After that, a 30-nm-thick Si buffer layer was grown at 700 °C.
First, a 500-nm GaAs buffer layer was grown on a GaAs 001) substrate.
A 300-nm undoped GaAs buffer layer was grown at a substrate temperature Ts of 580°C.
First, a 400 nm GaAs buffer layer was grown at 600°C.
Before growth of MnAs, a 100-nm GaAs buffer layer was grown to smoothen the surface.
Next, a GaAs buffer layer was grown on the surface by using MBE until atomically smooth surface was obtained.
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