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The buffer layer is believed to reduce the mismatch of the atomic structure between the glass and VG and similar results observed elsewhere [32], and the VG nanosheets are grown on the buffer layer with less stress.
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Will the contact property of interfaces between active layer droplets and cathode buffer layers be changed when the buffer layer is modified?
First, a 20 nm thick GaN buffer layer was deposited on (0001) sapphire substrate.
Oxide buffer layer was pre-sputtered using RF sputtering technique.
Thus, a buffer layer was avoided in this experiment.
GaN buffer layer was achieved by a two-step method.
Then, a 10-nm thick Al2O3 buffer layer was deposited by atomic layer deposition.
A In2S3 buffer layer was introduced between TiO2 and CuInS2 layer also by SILAR.
Both the QDs layer and the buffer layer were grown at 530 °C.
This layer of amorphous carbon is believed to serve as a buffer layer as mentioned earlier.
Therefore, it is believed that CsOx could be an effective cathode buffer layer for PSCs.
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