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The sensor type designed to contain an Au/Cr buffer layer exhibits a detection limit of 20 ppm of H2.
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A Li/CNT cell with CNTs on a 60-nm Au buffer layer exhibited a good charge/discharge behavior, good cycle performance, and slow capacity fading.
The reference device with a pristine PEDOT PSS buffer layer exhibited an open-circuit voltage (Voc) of 0.62 V, a short-circuit current density (Jsc) of 9.78 mandm2, and a fill factor (FF) of 48.7%; thus, the calculated PCE was 2.95%.
As a result, the 365-nm LEDs with thin Cr/Ni buffer layers exhibited a significantly higher light output power, lower forward voltages, and lower leakage currents than the LEDs with thin ITO buffer layers and reference ITOs.
Consequently, the Si nanostructures coated with a PDMS buffer layer exhibited remarkably reduced reflectance at UV Vis regions compared to a flat Si surface.
The pentacene-doped PEDOT PSS as a buffer layer exhibited annealing temperature dependence of charge mobility.
UBM sputter grown ZnO buffer layers exhibited higher crystallinity with increases in target power density, resulting in large grain size, uniform surface morphology, and low resistivity.
Some retinal layers exhibited a thinning trend measured with optical coherence tomography (OCT) imaging.
First, a GaAs buffer layer, an AlGaAs barrier layer and a GaAs layer were grown by MBE.
A buffer layer serves as a transition layer connecting the GaN epilayer and the Si substrate.
A Li/CNT cell consisting of CNTs on a 60-nm Au buffer layer/Ti substrate exhibited a lower irreversible capacity and better cycle performance than a cell with CNTs on a Ti substrate.
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