Sentence examples for buffer and deposited at from inspiring English sources

cDNA was diluted 1 2 with TE buffer and deposited at −80°C for further analysis.

The plant was identified and deposited at National Defense Medicinal Center NDMCPP No. 900801).

The cDNA was printed in 3× SSC and 1.5 M Betaine buffer and deposited with Stealth Micro-Spotting Pins (Telechem) at 20°C and 65% humidity.

The SEM observations reveal that the Ni catalyst films and the TiN buffer layer deposited at ambient temperature were found to be smooth and homogenous.

Hence, a flat trough in which the citric buffer is deposited at the bottom and octanol at the top ensures a large surface area for the deposition of NaOH-dissolved hematin.

Therefore, unlike to the growth on sapphire, the Si substrate has to be protected first by a thin AlN buffer layer deposited at high temperature using trimethylaluminium (TMAl) and NH3 precursors.

We have succeeded to prepare epitaxial yttria stabilized zirconia (YSZ) thin films at room temperature (27 °C) by the use of nm thick YSZ buffer layer deposited at 800 °C on Si(0 0 1) substrate.

Some schematic drawings of the normal and obliquely deposited layers and the magnetically coupled and uncoupled multilayers are shown in Figure 2. The use of the Ta spacer layer has therefore allowed us to deposit multilayers consisting of sets of four Co54°/Co0°/trilayerslayers deposited onto a 6-nm-thick Ta buffer layer deposited at 54°.

Then elastin was suspended in the buffers and deposited on PPF : DEF scaffolds; glass substrates were used as control.

Then the template is transferred into the growth chamber and cleaned at the temperature of 800°C for 60 min. A 140-nm-thick buffer layer is deposited at the temperature of 700°C, and a 200-nm high-temperature GaN layer is then grown at the temperature of 780°C.

After nitrifying HfO2 substrate at the temperature of 680°C for 20 min, a 150-nm thick buffer layer is deposited at a temperature of 680°C, and a 450-nm high-temperature GaN layer is then grown at the temperature of 750°C.