Sentence examples for bright state of from inspiring English sources

We can well reproduce the measured temperature dependence using the energy separations from Table 1 and Table 2 and a radiative rate of the lowest bright state of 0.14 ± 0.02/ns, which corresponds to a radiatively limited dephasing of only γB = 0.09 ± 0.01 μeV, much smaller than the spin flip limited dephasing γ0 = 25 μeV in this sample.

In an uplink, only a relatively simple polarization analysis module needs to be on board the satellite and ultra bright state-of-the-art quantum source(s) can be used on ground.

This analysis confirms the previous assignation of the three emitting states to the two lowest bright states of spherical CdSe QDs and to surface states.

By considering the characteristic decay times and by comparing the energetic separations among the states with those theoretically expected, we attribute the two higher energy peaks to ± 1 U and ± 1 L bright states of the fine structure picture of spherical CdSe QDs, and the third one to surface states emission.

We observe that the time constantt 1 andt 2 are the typical carrier relaxation times from intrinsic bright states of the fine structure of spherical CdSe QDs[4] into the surface defect states [5], andt 3 is comparable with typical lifetime of surface-related emission in CdSe QDs [6].

A not-so-bright state of affairs.

We have obtained the first high-resolution X-ray spectrum of RX J0513.9-6951 on December 24 , 2003during an X-ray bright state as a 48 ks target of opportunity observation with the low energy transmission grating spectrograph (LETGS) on board Chandra.

The centerpiece is a bright red, state-of-the-art, Stefano Ferrara wood-burning brick oven, shipped directly from Naples.

In this model, the dephasing rate is given by γZPL = γB + γ0 + γth + γU, where γB is the radiatively limited dephasing of the lowest bright state, γ0 and γth are the spin flip relaxation into the lowest dark state via spontaneous and stimulated phonon emission, respectively, and γU accounts for excitation into a higher state by phonon absorption.

From the temperature dependence of the zero-phonon line dephasing, the exciton lifetime, and the exciton thermalization within its fine structure, we show that the zero-phonon line dephasing of the lowest bright state originates from the phonon-assisted spin flip to dark exciton states.

By considering typical decay times and the energetic separations among the states extracted from the transient spectra, we conclude that the two peaks at higher energies can be assigned to emission from the lowest intrinsic bright states ± 1 U and ± 1 L of the fine structure of spherical CdSe QDs, whereas the low energy peak is due to emission from surface states.