The stacking structures still own a higher breakdown field.
Due to the extremely high breakdown field property of Ga2O3, an insulator with both high permittivity and high breakdown field must be used for the field plate formation.
Thinner IL would result in the increase of Dit and the degradation of breakdown field.
Hence, a higher electrical breakdown field at low leakage current density has been achieved.
Device with a thicker IL introduces a higher breakdown field and also a lower Dit.
Maximum discharged energy density near breakdown field was achieved at ultralow BT loading of 1 vol%.
GaN has a wide direct bandgap and a resulting high breakdown field.
This film showed a breakdown field strength of 4 MV cm−1.
It is found that stacking structure owns a higher breakdown field, which would lead to lower resistance after breakdown.
In this study, we demonstrated that structure with stacking dielectric layer would own the higher breakdown field from TZDB test.
In comparison, dielectric breakdown field recorded in this work is higher than the previous reported works [4, 5, 14].
