Sentence examples for both devices are shown from inspiring English sources

The I-V curves of both devices are shown in the insets.

The structures of the devices are shown in the insets.

Frequency response characteristics of the fabricated devices are shown in Fig. 8.

The structures and energy level diagrams of these devices are shown in Fig. 4a, b.

HRTEM images of the S2 and S1 devices are shown in Figure 1b,c.

The φ-q curves for the three memristor devices are shown in Fig. 1.

The extracted electrical parameters of annealed devices are shown in Table 1.

The retention characteristics of the Cu/GeSex/W CBRAM devices are shown in Fig. 6a.

The general placements of all measurement devices are shown in Fig. 9.

The Server Time models of the two tested devices are shown in Tables 4 and 5.

The Network Connection models of the two tested devices are shown in Tables 2 and 3.