Figure 23 Power and energy consumption for different values of boosted voltage and write pulse width.
Furthermore, boosting voltage level of SL during write-1 operation also reduces the write-failures.
For instance, when pulse width is 30 ns, write-1 BER = 0.25 × 10 2 when the boosted voltage is 1.1 V, whereas write-1 BER = 0.4 × 10 4 when the boosted voltage is 1.3 V. Figure 22 BER versus write pulse duration for different values of SL voltage.
As an essential low-voltage circuit, a triple pumping scheme is proposed to generate a stable boosted voltage whose level exceeds over twice the supply voltage and which is required for the boosted word-line bias.
In this technique, to improve the write features of the SRAM cell, a negative voltage is applied to one of the bitlines in the SRAM cell while another bitline is connected to a boosted voltage.
For BER = 10 5, we consider the following combinations of write pulse widths and boosted voltages: (60 ns, 0.9 V), (42 ns, 1.1 V), (31 ns, 1.3 V), and (25 ns, 1.5 V).
Inverting Op-amp is used to boost the voltage from mV to voltage range.
A 690 V/33 kV step-up transformer is used to boost the voltage up to 33 kV, since the stator output voltage of the WTs generator is typically 690 V.
The former DC to DC boost converter voltage and transfers circuit, we adopt pulse-width modulation (PWM) technology and the voltage feedback control to stabilize voltage at the value of 200 volt.
Because a typical 10 cm × 10 cm (4 inch × 4 inch) solar cell generates only about two watts of electrical power (15 to 20 percent of the energy of light incident on their surface), cells are usually combined in series to boost the voltage or in parallel to increase the current.
He figured the automotive industry would soon boost the voltage to 42.
