Sentence examples for bonding was evaluated by from inspiring English sources
To gain more structural information, the extent/degree of hydrogen bonding was evaluated by the average number of all hydrogen bonds divided by the average number of molecules in the first solvation shell, defined by the first minimum of the oxygen-oxygen radial distribution function (RDF) [23].
Energies of the non-canonical so-called weak intermolecular CH..O/N H-bonds were evaluated by the empirical Espinosa-Molins-Lecomte (EML) formula [24, 25] based on the electron density distribution at the (3,-1) BCPs of the H-bonds: {E}_{mathrm{HB}} = 0.5times V(r), (3).
The thermo-mechanical integrity of the wire bond interconnects was evaluated by wire pull and hot storage tests.
The effect of roughness on the single-lap-joints of the adhesively bonded specimens was evaluated by comparing the shear strengths.
The bond degradation was evaluated by carrying out direct pullout tests on aged specimens that were previously subjected to distinct environmental conditions for different periods of exposure.
The bond strength was evaluated by the push out test, which is very useful for verifying the effect of polymerization shrinkage on composite restorations and its influence on bond strength.
The tensile behavior of a high activity stand-alone Pt-aluminide (PtAl) bond coat was evaluated by the micro-tensile test method at various temperatures (room temperature to 1100 °C) and strain rates (10−5 s−10−5−10−510−5
The bonding quality of the chips was evaluated by employing SEM, shear strength testing procedure and electric current measurement at different applied voltages.
The microstructure evolution, including crack and pore formation, was analyzed, besides the behavior of bonding layer between tungsten and SiC/SiC was evaluated by C-scanning images of ultrasonic method and Electron probe Micro-analyzer (EPMA).
The board performance was evaluated by measuring internal bond (IB) strength, modulus of rupture (MOR) and modulus of elasticity (MOE).
The configuration of the H bonds to Si before and after annealing was evaluated by Fourier transform infrared spectroscopy by employing a Bruker Tensor 37 spectrometer (Bruker, Ettlingen, Germany) with 2 cm−1 resolution.
