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This is done by forming an electronic dielectric dipole between the insulator and the oxide of semiconductor in accordance with the bond polarization theory.
According to the bond polarization theory [15], an electronic dielectric dipole is formed between the inserted insulator and semiconductor native oxide which results in a shift of the SBH, as Figure 1 depicts.
Here we briefly review the previous mechanisms of the spin-order induced polarization, including the Katsura Nagaosa Balatsky (KNB) model, inverse Dzyaloshinskii-Moria (DM) interaction model, exchange striction model, and the bond polarization model.
Al2O3 is chosen as the interfacial insulator for its large areal oxygen density which means that the formation of dipole is much stronger and shifts the SBH more effectively than that induced by other insulators based on the bond polarization theory [15] and Kita's model [16].
Bond polarization as a method for labilizing bonds is a well-established principle in enzymology.
For example, the V: VI turnover ratio shows that bond polarization contributes a factor of ∼2000 to rate acceleration.
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It can also be improved by extending it to give potential-dependent bond polarizations in adsorbed intermediates by incorporating charges on the electrode surface atoms and compensating charges in the double layer, though such calculations are highly computationally demanding.
Application to constant time 2D [13C, 1H]-HSQC spectra recorded for a protein sample with canonical MHS/HS schemes showed that accurate CAM data acquisition can be readily implemented on modern spectrometers for experiments based on through-bond polarization transfer.
Most probably, the electric field repulsed negatively charged protein segments from the surface and caused alteration of the charge distribution in the protein introduced by shifts in the acid base equilibrium toward the ionized forms, the hydrogen bonds polarization, alignment of the molecular dipoles, and displacement of the charged residues.
Within the linear response theory, a local bond-polarization model based on the displacement displacement Green's function and the Born potential including central and non-central interatomic forces is used to investigate the Raman response and the phonon band structure of Ge nanostructures.
This is an expression of the fact that, as the proton moves along the hydrogen bond, the polarization changes accordingly and affects the proton charge distribution.
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