Sentence examples for blocking layers at the from inspiring English sources

Several attempts have been made to overcome this problem, such as the use of blocking layers at the interfaces.

Such high efficiency is attributed to good confinement effect of triplet excitons by narrow band-gap CTP host with reasonable doping concentration and introduction of good exciton blocking layers at the emitting layer interfaces.

However, by introducing a blocking layer at the base of the ZnO films, the influence of the blocking layer on the performance of ZnO DSSCs is an ongoing debate [10].

Annealing the HfO2 blocking layer at 400°C in O2 ambient decreases oxygen vacancy and suppresses unwanted electron trap-assisted tunneling.

In addition, the electron blocking layer (EBL) at the interface between the CQD thin film and the metal electrode is used in the same principle to prevent recombination by blocking the hole transport at the interface.

The use of high-κ dielectric materials as blocking layers decreases the electric field at the top dielectric and program/erase (P/E) voltages, which also supports the demand for small effective oxide thickness [12].

This asymmetry can be achieved by the choice of redox electrolyte as well as by selective use of electrocatalysis to accelerate electron transfer at one contact and suitable blocking layers to retard electron transfer at the other interfaces.

The epitaxial structure of the UV-LEDs was grown on both substrates, comprising a 2.5-μm-thick n-GaN epilayer grown at 1,150°C, a 12-period InGaN/AlInGaN MQW active layer grown at 830°C, 15-nm-thick Mg-doped Al0.3Ga0.7N electron blocking layers (EBLs) grown at 1,030°C, and a 100-nm-thick p-GaN layer grown at 1,030°C.

Here, we develop a bilayer structure of p-type Cu NiOx nanoparticle-based mesoporous and Cu-doped NiOx blocking layers to achieve efficient charge collection at the NiOx/perovskite interface with minimized recombination loss.

The TiO2 blocking layer can protect the GZO electrodes from the acidic dye solution and the oxidation at high temperature.

The high-k dielectric layer of Al2O3 acts as an electron blocking layer which minimizes the surface recombination at the interface.