Sentence examples for blocking layer and the from inspiring English sources

The structure, morphology and photocatalytic performance of the TiO2 compact layer (blocking layer) and the effect of AZO films on the DSSC's conversion efficiency are studied.

This increased energy conversion efficiency seems to be associated with improved electronic energy transfer by increasing the densification of the blocking layer and improving the adhesion between the blocking layer and the FTO substrate.

The less dark current observed in the SHI-irradiated cell compared with the pristine cell may be attributed to the better electrical contact between the blocking layer and the FTO substrate, and the compact nature of the blocking layer as well.

Mesoporous ZnO layers with thickness of about 9.8 μm prepared by a chemical method are applied onto the laser ablated ZnO blocking layer and this stack is used as the photoanode of dye sensitized solar cells (DSSCs).

Then, TiO2 nanoparticles were coated on the blocking layer, and dye was attached for the fabrication of DSSCs.

For comparison, the GZO without the blocking layer and commercially used FTO glasses were also employed to fabricate the DSSCs.

Figure 8 P/E characteristics of sample A 4 with as-annealed HfO 2 for P/E voltage levels of +2/−2 V. Electrons trapped in Au NCs tend to tunnel into the gate electrode through the oxygen vacancy-related levels of the HfO2 blocking layer and tend to degrade memory performance because of the existence of oxygen vacancy.

Figures 3a and 3b show the SEM images of the TiO2 nanoparticles coated on the GZO glasses with the TiO2 blocking layer and normal GZO glasses, respectively.

The TiO2 nanoparticles were coated on the (a) GZO glasses with the TiO2 blocking layer and (b) normal GZO glasses.

In order to compare the effect of the blocking layer, two kinds of DSSCs were assembled: (a) a pristine cell fabricated from the ESD TiO2 blocking layer and (b) a SHI cell using an irradiated ESD TiO2 blocking layer.

We study the internal quantum efficiency (IQE) of light-emitting diodes (LEDs) with an added AlxGa1−xN/GaN multi-quantum-barrier as the electron blocking layer (EBL) and optimize the structure parameter.