Sentence examples for binding energy of about from inspiring English sources

Free excitons in ZnO, however, have a binding energy of about 60 meV [18], that is to say, the corresponding luminescence is expected at 3.31 eV.

ZnO also has large exciton binding energy of about 60 meV, which has been shown to be valuable for optoelectronic devices such as light-emitting diodes and lasers.

The Ni metallic state at binding energy of about 853 eV is present as well, whereas it is gradually disappeared with increasing the Pt proportion.

Compared with the Pt 4f 7/2 peak of bulk Pt at binding energy of about 71 eV, there is a significant shift of the Pt 4f 7/2 peak to higher binding energy for the hybrids.

In all the spectra, the Ni oxidized state (e.g., at binding energy of about 856 eV) together with a broad satellite peak at higher binding energy account for the vast majority.

As known, the peaks are located at binding energy of about 899, 903, and 916 eV normally used as the spectroscopic marker to detect the presence of Ce4+ state.

The optical properties are characterized by high absorption and emission rates, induced by the highly polarizable π-electronic systems and the large electron hole correlation leading to exciton binding energies of about 0.5 eV.

The binding energies of about −3.34 and −3.78 eV were obtained for I PGNB and II PGNB, respectively, within the BSSE corrections, which are more stronger than the Pt binding energy of −2.12 eV for a pure graphene.

The Ni 2p3/2 and Ni 2p1/2 lines were found at the binding energies of about 855, 860.9, 872.8 and 879 eV, indicating the existence of NiO.

Using the Pd 3d 5/2 peak as an example, the Pd0 and Pdx+ components are at binding energies of about 335.5 and 337.5 eV (Fig. 5), respectively [35, 43].

The XPS peaks (Fig. 4c) at binding energies of about 1022.1 and 1044.8 eV were assigned to the Zn 2p3/2 and Zn 2p1/2 states [24], which suggested that Zn element presented in the form of Zn2+ in products.