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As revealed, once the programming voltage increases beyond the threshold voltage, the cell resistance starts to drop due to the crystallization of AST alloy and then reaches a minimum, which is corresponding to the set resistance.
As revealed, once the programing voltage increases beyond the threshold voltage, the cell resistance starts to drop due to the crystallization of GST alloy and then reaches a minimum, which is corresponding to the set resistance.
Trap states below the mobility edge reduce the transconductance even beyond the threshold voltage and likely lead to an underestimate of the free-carrier field-effect mobility of the present CVD MoS2 transistors.
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Thus, the maximal voltage is defined as the threshold voltage.
Nevertheless, an HBL tends to increase the threshold voltage.
They also allow a tuning of the threshold voltage.
Before the threshold voltage, as the actuation voltage increases, the control effects become better.
Therefore, the photocurrent increases exponentially before the threshold voltage.
The line indicates the threshold voltage of a fresh sample.
The threshold voltage of CMOS technology affects sensitivity.
The threshold voltage is obviously decreased with TEMI decreasing.
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