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The mathematical relationship between the device parameters and electric field distribution in the device was built.
In this section, a mathematical relationship between the device parameters and electric field distribution in the device was built, which was applied to analyze the charge layer and the tunneling effect.
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A large contact resistance can limit the operation of devices and even lead to inaccuracies in the extraction of the device parameters.
The most critical point here is to determine the device parameters in the desired accuracy.
The results of this study allow a greater understanding of the relationships between key LSC device parameters and the photophysical and photovoltaic behavior of planar thin-film LSC systems and provide useful guidelines for optimal design of thin-film LSC devices.
One of the key device parameters is the channel length, L, which is the distance between the two n+-p junctions, as indicated in Figure 9.
Fig. S5† presents the average values of the photovoltaic device parameters.
The solid curves show simulations with the actual device parameters, including dissipation.
The solid lines demonstrate simulations with the previously extracted device parameters.
To establish relationships between process parameters and device parameters.
Figure 4 Statistical distribution of device parameters and the calculated correlation between the energy versus sample temperature.
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