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However, high off-currents (IOFF) are also observed due to the large overlapping area between drain and source regions.
Figure 4a, b shows the electrical current measured between drain and source as a function of applied gate voltage for the two GFETs.
The resistance was so large that the current between drain and source (IDS) could not be modulated by gate voltage (VG), and we could not make sure whether the high resistance came from the nanowire itself.
The pulse shape and the total charge generated by the impact of an energetic ion are studied in relation to the energy and species of the ion and the applied voltage between drain and source.
IDS as a function of voltage between drain and source (VDS) under different gate voltages (VG) was plotted in Figure 3a, where the gate voltages modulated the current through the nanowire obviously.
The interactions between nanotubes and shuttle media stabilized the shuttle media at the gate nanotube cap and at the tunneling position between drain and source electrodes, where the contact areas were largest.
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Through e-beam evaporation and lift-off technology, Schottky contacts with Ni/Au metal stacks were deposited in the center between the drain and source contacts, and the size of each Schottky contact was 20 μm long by 100 μm wide.
This results in an energy barrier between the drain and the source, raising the threshold voltage Vth (the gate-source voltage necessary for current to flow through the transistor).
Open image in new window Scheme 9 The VG FET sensor is made by direct growth of VG between the drain and the source electrodes.
The as-prepared SnO2nanowires were sonicated into a suspension in ethanol, followed by solution casting the slightly dispersed SnO2nanowires between the drain and the source of Au electrodes to form a single SnO2nanowire FET (SnO2-FET).
Figure 3b shows electrical measurements made by applying a voltage between the drain–source electrodes and measuring the current flowing through the organic nanofibers/flakes grown on narrow (w = 200 nm) and wide (w = 2 μm) electrodes, respectively, with zero volts applied to the gate.
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