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Shatter proof: An electron micrograph taken after a bending test.
The second is 4 point bending test.
The mobility is normalized to the initial value in the devices before the bending test.
The beams were tested in a four-point bending test.
Comparable results from FEA and bending test were achieved.
(a,b) Schematics of the bending test and photographs of OFETs in a planar and bent configurations.
The compression and bending test setup and results are shown in Fig. 3b, c and Fig. 3d, e, respectively.
Both the TIPS-pentacene and TES-ADT transistors gave similar results in this type of bending test.
Finally, beams with TRSSC are subjected to bending test.
Three-point bending test was performed for each specimen.
In the second type of bending test (Fig. 5), rigid ceramic wedge-like support structures have been used.
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