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To determine the diastolic pressure, we record the DC value at the point when the amplitude of the oscillation decreases to below the threshold voltage.
For input voltages below the threshold voltage for field emission, the nanotube loop is effectively open and the circuit response is consistent with a discharging capacitor.
When the gate bias is below the threshold voltage, a small amount of electrons are diffused into the channel, due to large barrier between MoS2 and source electrode.
However, since the read region of the voltage is usually below the threshold voltage, only resistance drift is studied in this article.
The subthreshold current much below the threshold voltage, which is due to the reflections from the barrier of the near-midgap state, decreases exponentially.
In qualitative agreement with the experiments the I D - V G-traces exhibit below the threshold voltage thermally activated transport at small drain voltages.
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The threshold voltage exists below T < 100 K (T < 30 K) for CPA CPANII) nanofibers.
Trap states below the mobility edge reduce the transconductance even beyond the threshold voltage and likely lead to an underestimate of the free-carrier field-effect mobility of the present CVD MoS2 transistors.
Using a constant mobility model with the insertion of trap states at 1.0 eV below the conduction band edge, they found an excellent agreement with the threshold voltage shift without degradation of mobility and subthreshold slope.
We then count the number of pulses that has maximum values above the threshold voltage.
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