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Slight slip traces on (001) were observed in Ti-62.5at.%A1 even below the peak temperature.
Below the peak temperature, ordinary slips are dominantly operative for most loading orientations.
So below the peak temperature, superlattice dislocations control the plastic behavior of Al-rich TiAl ( Nakano et al. 1996).
Secondly, in contrast to the ordinary slips in Ti-rich alloys, superlattice dislocations are mostly operative below the peak temperature in the Al-rich side.
In short, all ordinary systems are harder below the peak temperature, and all superlattice dislocation slips are harder beyond the peak.
In contrast to Ti-rich side, superlattice dislocation slips are more operative below the peak temperature than that of ordinary slips.
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Finite element analysis (FEA) simulation results of the cascode GaN device in a flip-chip format demonstrate the possibility of increasing the device switching speed while maintaining the peak temperature of the device below 125 °C.
As mentioned earlier, {111}(frac {1}{2}<)110] slip was dominant at temperatures below the peak, while there are some reports stating that slip predominance changes to (001) plane above the peak temperature.
The peak temperature of the single glassy phase alloys decreases with increasing hydrogen content below about 20 at.%.
The modeled photothermal signal is defined as the peak temperature increase observed over one heating cycle, as shown in Eq. (10) below.
In case of cooling system failure, the diameter gives enough surface area to remove the decay heat by radiation to the surrounding reflector assemblies while keeping the peak temperatures below approximately 700 °C.
More suggestions(15)
below the isotropisation temperature
below the solidus temperature
below the air temperature
below the ignition temperature
below the θ temperature
below the peak level
below the peak year
below the peritectic temperature
below the thermocline temperature
below the freezing temperature
below the reference temperature
below the deposition temperature
below the adsorption temperature
below the onset temperature
below the recrystallization temperature
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